RTU 3rd Sem EDC Paper

The Examination schedule is released by RTU for B.Tech 3rd Semester Program. I am pursuing B.Tech with Electronics Devices and Circuits (EDC). I have only books and syllabus for this Exam. So pls provide me some question papers with answer keys of Electronics Devices and Circuits (EDC) 3rd Semester of B.Tech Program of RTU.

Can you provide me the syllabus of 3rd Sem EDC (Electronic Devices & Circuits) under B.Tech. (EC) Program offered by RTU (Rajasthan Technical Unoversity) on which the question paper is based?

[pooja]

The syllabus of 3rd Sem EDC (Electronic Devices & Circuits) under B.Tech. (EC) Program offered by RTU (Rajasthan Technical Unoversity) on which the question paper is based is as follows:

3EC1A Electronic Devices & Circuits
B.Tech. (EC) 3rd Sem

Unit - I
SEMICONDUCTOR PHYSICS - Mobility and conductivity, Charge densities in a semiconductor, Fermi Dirac distribution, Fermi-Dirac statistics and Boltzmann approximation to the Fermi-Dirac statistics, Carrier concentrations and Fermi levels in semiconductor, Generation and recombination of charges, Diffusion and continuity equation, Transport equations, Mass action Law, Hall effect.

Unit - II
JUNCTION DIODES - Formation of homogenous and hetrojuntion diodes and their energy band diagrams, Calculation of contact potential and depletion width, V-I characteristics, Small signal models of diode, Diode as a circuit element, Diode parameters and load line concept, C-V characteristics and dopant profile.
Applications of diodes in rectifier, Clipping, Clamping circuits and voltage multipliers, Transient behavior of PN diode, Breakdown diodes, Schottky diodes, and Zener diode as voltage regulator, Construction, Characteristics and operating principle of UJT.

Unit - III
TRANSISTORS - Characteristics, Current components, Current gains: alpha and beta. Variation of transistor parameter with temperature and current level, Operating point, Hybrid model, DC model of transistor, h-parameter equivalent circuits CE, CB and CC configuration DC and AC analysis of single stage CE, CC (Emitter follower) and CB amplifiers AC & DC load line, Ebers-Moll model Biasing & stabilization techniques Thermal runaway, Thermal stability

Unit - IV
JFET & MOSFET - Construction and operation, Noise performances of FET, Parasitic of MOSFET, Small signal models of JFET & MOSFET, Biasing of JFET's & MOSFET’s, Low frequency single stage CS and CD (source follower) JFET amplifiers, FET as voltage variable resistor and FET as active load.

Unit - V
SMALL SIGNAL AMPLIFIERS AT LOW FREQUENCY - Analysis of BJT and FET multistage amplifier, DC and RC coupled amplifiers. Frequency response of single and multistage amplifier, mid-band gain, gains at low and high frequency.
Analysis of DC and differential amplifiers, Miller's Theorem, use of Miller and bootstrap configuration Cascade and cascode configuration of multistage amplifiers (CE-CE, CE-CB, CS-CS and CS-CD), Darlington pair.

TEXT BOOKs:
1. Integrated Electronics, Millman Halkias, T.M.H, (2001)


REFERENCE BOOKs:
1 Electronic devices & circuits theory, R.L. Boylestad, Louis Nashelsky , Pearson
Education 1978
2 Electronic devices & circuits, David Bell, Oxford Publications 2009
3 M Rashid Microelectronic circuits : Analysis & Design, Cengage learning 1999
4 Millman, Electronics Devices and Circuits, TMH 2010
5 Electronic Devices,7e, Floyd, Pearson 2008
6 A.S. Sedra and K.C. Smith, Microelectronic Circuits, Saunder's College Publishing 1991