2021 2022 Student Forum > Management Forum > Main Forum

 
  #2  
1st June 2018, 02:32 PM
Unregistered
Guest
 
Re: CUSAT M Tech VLSI Syllabus

Hi buddy here I am looking for CUSAT university M.Tech VLSI Technology And Design paper syllabus so would you plz let me know from where I can do download it ??
  #3  
1st June 2018, 02:32 PM
Super Moderator
 
Join Date: Aug 2012
Re: CUSAT M Tech VLSI Syllabus

As you want here I am giving below CUSAT university VLSI Technology And Design paper syllabus which part of M.Tech (Electronics & Communication Engineering) program :

ELE 3104 VLSI TECHNOLOGY AND DESIGN
Basics of MOS, Bipolar and BiCMOS Device : MOS transistors, nMOS / CMOS
device technology, Basic electrical properties of MOS transistor, V-I relationship,
Threshold Voltage, MOS device as a resistor, MOS device as a capacitor,
Transconductance, Conduction mechanisms in MOS device, Latch up in CMOS, Bipolar
transistor structure and conduction, BiCMOS device, Latch up susceptibility in
BiCMOS.
MOS Circuit Design Processes and Subsystem Layout: MOS Layers, Stick Diagrams,
Design Rules and Layout, General observations on the Design rules, Layout Diagrams,
Basic Circuit concepts, Inverters. Architectural issues, Gate logic, Combinational logic,
structured design processes, Clock sequential circuits, General considerations for bus
lines, power dissipation, current limitations.
Propagation delays and Scaling in MOSFET : Propagation Delays, Gate delay,
Interconnect delay, Effects of sheet resistance and capacitances, Parasitics and
interconnect impedances, Scaling factors for device parameters, Limitations of scaling,
Constant field and constant voltage scaling, Effects on threshold voltage, Short channel
effects.
Basics of VLSI Device Fabrication : Basics of wafer fab processing, FEOL processing,
Basics of oxidation / implantation / lithography / PVDs and CVDs, BEOL process,
Interconnects, Process integration and in-line tests.
High Frequency VLSI Devices and Sub-Micron Trends: Direct band gap
semiconductors, Basics of GaAs material and structure for high frequency applications,
GaAs based devices, MESFETs, RF-CMOS devices, FinFETS, Strained Si and Si-Ge


Quick Reply
Your Username: Click here to log in

Message:
Options

Thread Tools Search this Thread



All times are GMT +5. The time now is 05:48 AM.


Powered by vBulletin® Version 3.8.11
Copyright ©2000 - 2021, vBulletin Solutions Inc.
SEO by vBSEO 3.6.0 PL2

1 2 3