IES Question Paper for ECE stream

Will you provide the IES question paper for Elecronics and Communication stream?

[Arun Vats]

Indian Engineering Service (IES) Exam Pattern consists of written examination and personality test or personal interview (PI).
The written examination will consist the following two sections:
Section I – objective types questions
Section II conventional (essay) type questions papers.

Few questions of Elecronics and Communication stream for IES is given below:
The I-V characteristics of a tunnel diode exhibit
current-controlled negative resistance
current-controlled positive resistance
voltage-controlled negative resistance
temperature-controlled positive resistance

A gate to drain-connected enhancement mode MOSFET is an example
an active load
a switching device
a three-terminal device
a three-terminal device

Thermal runway is not possible in FET because, as the temperature
the drain current increases
the transconductance increases
the mobility increases
the mobility decreases

The output impedance of a BJT under common-collector configuration
medium
low
high

Consider the following statements related to JFET:
1. Its operation depends on the flow of minority carriers only.
2. It is less noisy than BJT
3. It has poor thermal stability
4. It is relatively immune to radiation
The correct statements are
1, 2, 3 and 4
3 and 4 only
1 and 2 only
2 and 4 only

Consider the following statements:
1. Speed of operation of MOSFET is more than the speed of operation of SCR
2. SCRs have lower power loss than MOSFETs.
3. The current in conducting state can easily be controlled through the gate in SCR.
4. MOSFET is not a current triggered device.
The correct statements are
1 and 4 only
1, 2, 3 and 4
1 and 2 only
2 and 3 only








For more questions,here I am giving attachment

Will you provide the IES question paper for Elecronics and Communication stream?

[Quick Sam]

Few questions of Elecronics and Communication stream for IES is given below:
The I-V characteristics of a tunnel diode exhibit
(a) current-controlled negative resistance
(b) voltage-controlled negative resistance
(c) temperature-controlled positive resistance
(d) current-controlled positive resistance

The output impedance of a BJT under common-collector configuration
(a) low
(b) high
(c) medium

A gate to drain-connected enhancement mode MOSFET is an example
(a) an active load
(b) a switching device
(c) a three-terminal device
(d) a three-terminal device

Thermal runway is not possible in FET because, as the temperature
(a) the drain current increases
(b) the mobility increases
(c) the mobility decreases
(d) the transconductance increases

Consider the following statements related to JFET:
1. Its operation depends on the flow of minority carriers only.
2. It is less noisy than BJT
3. It has poor thermal stability
4. It is relatively immune to radiation
The correct statements are
(a) 1, 2, 3 and 4
(b) 1 and 2 only
(c) 2 and 4 only
(d) 3 and 4 only
IES Question Paper ECE stream










For more questions,here I am giving attachment