2023 2024 Student Forum > Management Forum > Main Forum

 
  #1  
27th November 2014, 03:31 PM
Unregistered
Guest
 
Government Junior Electronics Engineering Papers

I have completed Diploma in Electronics Engineering and now want to apply for Junior Engineer in Government so please provide me previous year papers and syllabus?
Similar Threads
Thread
RRB Junior Engineer Previous Papers Electronics
DMRC Junior Engineer Electronics Sample Papers
Indian Engineering Services Electronics Previous Papers
Question papers of Mumbai university electronics engineering
Government jobs after B.Tech Electronics and Communication Engineering
Railway Recruitment Board Junior Engineer Electronics last year question papers
Government jobs for electronics engineering
After B.Tech Electronics and Communication Engineering government jobs exams
Government jobs after B.Tech in Electronics and Communication Engineering
Government jobs after Electronics and Electronics Engineering
Government jobs after Electronics Engineering
Mahatransco Junior Engineer Electronics Question Papers
After Electronics and Communication Engineering Government Jobs
Airport Authority of India Junior Executive Electronics last year question papers
Government Exams after B.Tech Electronics and Communication Engineering
ONGC GT Electronics engineering test-papers
Mahagenco Junior Engineer electronics engineering exam syllabus
BDL Junior Manager(Electronics) post Previous papers
Government jobs opportunities in india for Electronics Engineering students
MPSC PSI main exam books in MarathiQuestion papers of Junior Engineer(JE) electronics
  #2  
27th November 2014, 03:50 PM
Super Moderator
 
Join Date: Apr 2013
Re: Government Junior Electronics Engineering Papers

Here I am providing you previous year question papers and syllabus of Junior Engineer post in Government for Diploma in Electronics Engineering. Junior Engineers have posts in DMRC, BHEL, RRB UPPCL, etc.

Junior Engineer Electronics Question Paper:

The boundary between p-type material and n-type material is called
A. a diode
B. a reverse-biased diode
C. a pn junction
D. a forward-biased diode

An n-type semiconductor material
A. is intrinsic.
B. has trivalent impurity atoms added.
C. has pentavalent impurity atoms added.
D. requires no doping.

An ideal diode presents a(n) ________ when reversed-biased and a(n) ________ when forward-biased.
A. open, short
B. short, open
C. open, open
D. short, short

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?
A. bivalent
B. octavalent
C. pentavalent
D. trivalent
E. none of the above

There is a small amount of current across the barrier of a reverse-biased diode. This current is called
A. forward-bias current
B. reverse breakdown current
C. conventional current
D. reverse leakage current

VSB modulation is preferred in TV because
A. it reduces the bandwidth requirement to half
B. it avoids phase distortion at low frequencies
C. it results in better reception
D. none of the above

In colour TV receiver, varactor diode is used for
A. detection
B. rectification
C. tuning
D. both (a) and (b)

A 400 W carrier is amplitude modulated with m = 0.75. The total power in AM is
A. 400 W
B. 512 W
C. 588 W
D. 650 W

In radar systems PRF stands for
A. Power Return Factor
B. Pulse Return Factor
C. Pulse Repetition Frequency
D. Pulse Response Factor

Which of the following is the indirect way of FM generation?
A. Reactance bipolar transistor modulator
B. Armstrong modulator
C. Varactor diode modulator
D. Reactance FM modulator

As the frequency increases, the absorption of ground wave by earth's surface
A. decreases
B. increases
C. remains the same
D. either (a) or (c)

The velocity of sound waves in air
A. is constant at all temperatures
B. varies directly as temperature
C. varies inversely as absolute temperature
D. varies directly as square root of absolute temperature

The range of a cordless telephone is about
A. 1000 m
B. 500 m
C. 100 m
D. 10 m

The rate at which information can be carried through a communication channel depends on
A. carrier frequency
B. bandwidth
C. transmission loss
D. transmitted power

A carrier is simultaneously modulated by two sine waves having modulation indices of 0.4 and 0.3. The total modulation index will be
A. 0.1 B. 0.7
C. 0.5 D. 0.35


Junior Engineer Electronics Question Syllabus:

Electronics Engineering:
Electronic Devices: Energy bands in silicon, intrinsic and extrinsic silicon. Carrier transport in silicon: diffusion current, drift current, mobility, and resistivity. Generation and recombination of carriers.p-n junction diode, Zener diode, tunnel diode, BJT, JFET, MOS, MOSFET, LED, p-I-n and avalanche photo diode, Varactor Diode, Analog Circuits, Digital Circuits, Signal & Systems , Control System & Communication Basics. For Electronics & Communications people focus on Basic & Fundamental Electronics Concept, Signal & Systems, Wireless Communication, Antennas, Arrays, EMFT.

General Awareness:
Current affairs, Famous Personalities, Geography, Honors and Awards, Important Dates, Sports, Indian Railways, History & Culture, General Polity, Basic Economy..,

General Intelligence:
Coding-Decoding, Sequence & Series, Alphabet Test, Classification, Blood Relations, Direction Test, Venn Diagrams, Group Reasoning, Number, Ranking & Time Sequence Test, Logical Arrangement of Words..,

Arithmetic:
Average, Angles and Sides of various shapes, percentages, profit & loss and partnership, Square root and Cube root, Volume and Surface Area, Computation of Fractions, Computation of whole numbers, L.C.M and H.C.F.

Reasoning Ability:
Analyzing Arguments, Blood Relation, Test Cause and Effect Making Judgements, Puzzles, Seating Arrangement, Statements and Assumption, Statement and Conclusion
  #3  
21st February 2016, 01:19 PM
Unregistered
Guest
 
Re: Government Junior Electronics Engineering Papers

Hello sir I want to prepare for Government Junior Electronics Engineering so here can you please give me Paper so that I can practice ?
  #4  
21st February 2016, 01:19 PM
Super Moderator
 
Join Date: May 2012
Re: Government Junior Electronics Engineering Papers

Hey as per my idea I am giving you qus paper so you can practice for Government Junior Electronics Engineering

Here I am giving you Government Junior Electronics Engineering Papers


The boundary between p-type material and n-type material is called

A .a diode.

B. a reverse-biased diode.

C. a pn junction.

D. a forward-biased diode.

An n-type semiconductor material

A. is intrinsic.

B. has trivalent impurity atoms added.

C. has pentavalent impurity atoms added.

D. requires no doping.

An ideal diode presents a(n) ________ when reversed-biased and a(n) ________ when forward-biased.

A. open, short

B. short, open

C. open, open

D. short, short

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

A. bivalent

B. octavalent

C. pentavalent

D. trivalent


There is a small amount of current across the barrier of a reverse-biased diode. This current is called

A. forward-bias current.

B .reverse breakdown current.

C. conventional current.

D. reverse leakage current.

VSB modulation is preferred in TV because

A it reduces the bandwidth requirement to half
B. it avoids phase distortion at low frequencies
C. it results in better reception
D. none of the above

In colour TV receiver, varactor diode is used for

A. detection
B .rectification
C .tuning
D both (a) and (b)

A 400 W carrier is amplitude modulated with m = 0.75. The total power in AM is

A. 400 W
B .512 W
C .588 W
D .650 W


Quick Reply
Your Username: Click here to log in

Message:
Options

Thread Tools Search this Thread



All times are GMT +5. The time now is 04:15 AM.


Powered by vBulletin® Version 3.8.11
Copyright ©2000 - 2024, vBulletin Solutions Inc.
SEO by vBSEO 3.6.0 PL2

1 2 3 4