#1
28th April 2016, 01:50 PM
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Question Paper RRB Section Engineer Exam
Can you provide me the previous year question paper for preparation of Railway Recruitment Board or RRB Senior Section Engineer (SSE) Exam as my cousin will be giving the exam this time?
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#2
28th April 2016, 01:53 PM
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Re: Question Paper RRB Section Engineer Exam
The previous year question paper for preparation of Railway Recruitment Board or RRB Senior Section Engineer (SSE) Exam is as follows: Q .1: Power factor of a linear circuit is defined as the: a. Ratio of real power to reactive power b. Ratio of real power to apparent power c. Ratio of reactive power to apparent power d. Ratio of resistance to inductance Q .2: Schokley diode is a: a. Two-layer pn junction device. b. Three-layer pin junction device. c. Four-layer pnpn junction device. d. None of the above. Q .3: Consider Insulated Gate Bipolar Transistor (IGBT) and Bipolar Junction Transistor (BJT). Which of the following statement is correct: a. Both IGBT and BJT are current-controlled devices b. Both IGBT and BJT are voltage-controlled devices c. IGBT is a current-controlled device and BJT is a voltage-controlled device d. IGBT is a voltage-controlled device and BJT is a current-controlled device Q .4: The MOSFET when used in a common-source amplifier operates in: a. Saturation region only. b. Triode region only. c. Both saturation and triode regions. d. Both cut-off and triode regions. Q .5: An n-channel enhancement MOSFET with channel length L = 1 μm, channel width W = 8 μm and threshold voltage Vt = 0.8 V operates in the saturation region. The process transconductance parameter is 200 μA/V2. The gate-to-source voltage for a drain current of 100 μA is: a. 1.15 V. b. 1.25 V. c. 1.35 V. d. 1.45 V. Question Paper RRB Senior Section Engineer Exam |