2023 2024 Student Forum > Management Forum > Main Forum

 
  #2  
28th April 2016, 01:53 PM
Super Moderator
 
Join Date: May 2012
Re: Question Paper RRB Section Engineer Exam

The previous year question paper for preparation of Railway Recruitment Board or RRB Senior Section Engineer (SSE) Exam is as follows:

Q .1: Power factor of a linear circuit is defined as the:
a. Ratio of real power to reactive power
b. Ratio of real power to apparent power
c. Ratio of reactive power to apparent power
d. Ratio of resistance to inductance

Q .2: Schokley diode is a:
a. Two-layer pn junction device.
b. Three-layer pin junction device.
c. Four-layer pnpn junction device.
d. None of the above.

Q .3: Consider Insulated Gate Bipolar Transistor (IGBT) and Bipolar Junction Transistor (BJT). Which of
the following statement is correct:
a. Both IGBT and BJT are current-controlled devices
b. Both IGBT and BJT are voltage-controlled devices
c. IGBT is a current-controlled device and BJT is a voltage-controlled device
d. IGBT is a voltage-controlled device and BJT is a current-controlled device

Q .4: The MOSFET when used in a common-source amplifier operates in:
a. Saturation region only.
b. Triode region only.
c. Both saturation and triode regions.
d. Both cut-off and triode regions.

Q .5: An n-channel enhancement MOSFET with channel length L = 1 μm, channel width W = 8 μm and
threshold voltage Vt = 0.8 V operates in the saturation region. The process transconductance
parameter is 200 μA/V2. The gate-to-source voltage for a drain current of 100 μA is:
a. 1.15 V.
b. 1.25 V.
c. 1.35 V.
d. 1.45 V.

Question Paper RRB Senior Section Engineer Exam







Quick Reply
Your Username: Click here to log in

Message:
Options

Thread Tools Search this Thread



All times are GMT +5. The time now is 09:51 AM.


Powered by vBulletin® Version 3.8.11
Copyright ©2000 - 2024, vBulletin Solutions Inc.
SEO by vBSEO 3.6.0 PL2

1 2 3 4