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11th June 2016, 10:10 AM
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Join Date: May 2012
Re: ONGC Exam Pattern For Electronics

ONGC is conduct all India Competitive Recruitment Exam in every year and there are various jobs to be filled.

Candidates are invited for to appear for Objective Type Written Test comprising of the following three subjects:

Concerned Subject
General Awareness
Aptitude Test comprising of questions from Reading, Comprehension, Verbal/Non-Verbal Reasoning, Numerical Ability, Quantitative Aptitude, Data Interpretation etc

ONGC Exam Pattern for Electronics:

Written Test- 150 marks-3 hours duration
The written test will consists of Three sections 1. Technical 2. General Awareness 3. Aptitude
Time Duration: 3 Hours
No Negative marking
Objective type
Written Qualifying marks: 60%(Gen and OBC) and 40%(SC/ST/PWD)

Here are some previous year questions for ONGC electronics:

1. A differential amplifier amplifies the ---------- between two input signals.
a) addition
b) subtraction
c) multiplication
2. The differential amplifier can amplify ac as well as dc signals
because it
employs ----------.
a)
b)
3. Noise of input signal in differential amplifier
a) increases
b) decreases
c) remains the soul
4. Cascaded differential amplifier requires level translator because of
a) impedance matching
b) isolating each stage
c) d.c.shift.
5. In case of constant current bias ,R1 is replaced by diodes D1 & D2 TO
a) increase the input impedance
b) improve thermal stability
c) increase gain
6. If CMRR is high ,the wide variation of input within the tolerable limits of the
equipment makes output
a) high
b) low
c) the same

7. A binary half adder
a). Adds two binary digits and produces their sum and carry
b). Adds half the sum to the carry
c). Adds two binary digits and carry from previous addition
d). Adds two binary digits at half the speed

8. An index register in a computer is for
a. Arithmetic and logic functions
b. Storage of results
c. Modifying the address
d. Counting the no of programmes

9. An example of volatile memory is
a. RAM b. ROM c. EPROM d. Magnetic tape

10. Barrier voltage in a P-N junction is caused by
a. Thermally generated electrons and holes
b. Diffusion of majority carriers across the junction
c. Migration of minority carriers across the junction
d. Flow of drift current

11. The temperature coefficient of an intrinsic semiconductor is
a. Positive b. Negative c. Zero d. Like metals

12. A silicon transistor has a leakage current 1cbo = 1 ma. If the temp. rises by 50o C the leakage current will be
a. 30 ma b. 32ma c. 50ma d. no change

12. The noise figure of an ideal amplifier in decibel is
a. 0.5 b. 0 c. 1 d. 10

13. The rise time of an amplifier is 200 nsec. Its bandwidth is
a. 70MHz b. 140MHz c. 100MHz d. 1.75Mhz

14. MOSFET operates in
a. Depletion mode only
b. Enhancement mode only
c. Depletion and enhancement mode
d. None of these of the above

15. A device which behaves like SCRs is
a. UJT b. Triac c. MOSFET d. SRD

16. A plate modulated class C RF amplifier produces 100 KW of radiated power at 100 % modulation. The modulating audio amplifier supplies approximately

a. 25KW b. 33KW c. 50KW d. 66KW

17. A 100 MHz FM carrier, modulated by a 5 KHz sine wave deviates by 50 KHz. If the frequency of the modulating sine wave is doubled, the deviation will
a. Double b. Half c. Quadruple d. Have no change

18. Noise generated by a resistor is dependent on
a. Its Value
b. Its temperature
c. Both value and temp
d. None of these

19. A 32 channel 8 bit PCM system samples at 8 KHz rate. The overall bit rate in kilobits per second will be
a. 2048 b. 2000 c. 1920 d. 64

20. Rsistivity ofGermanium in ohms cm. is approx. equal to
a. 50 b. 10-12 c. 50k d. 10-6

21. The number of free electrons/cubic cm intrinsic Germanium at room temperature is approx. equal to
a. 1.5*1010 b. 2.5*1013 c. 1000 d. 5*106

22. The number of free electrons/cubic cm of intrinsic silicon at room temperature is approx. equal to
a. 1.5*1010 b. 2.5*1013 c. 10000 d. 5*106

23. The forbidden energy gap for silicon is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV

24. The forbidden energy gap for Germanium is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV

25. N type material is formed by the addition of the following (penta valent )atom in n to semiconductor material
a. Antimony
b. Arsenic
c. Phosphorous
d. Any of the above

26. P type material is formed by the addition of the following [Trivalent] atom tn to semiconductor material
a. Boron b. Gallium c. Indium d. Any of the above

27. Impurity atoms that produces N type material by its addition in semiconductor is called
a. Donar b. Acceptor c. Conductor d. Insulator

28. Impurity atoms that produces P type material by its addition in semiconductor is called
a. Donar b. Acceptor c. Conductor d. Insulator

29. Dynamic resistance of a diode Rd is if voltage changes is DVd and the current change is D Id
a. D Vd / D Id
b. D Id / D Vd
c. 1 / DVd
d. 1 / D Id

30. Point contact diodes are preferred at very high frequency, because of its low junction
a. Capacitance and inductance
b. Inductance
c. Capacitance

31. Identify the circuit given below
a. AND gate
b. OR gate
c. Rectifier
d. NOR gate

32. Identify the circuit given below
a. AND gate
b. OR gate
c. Rectifier
d. NOR gate

33. DC value of a Half wave rectifier with Em as the peak value of the input is
a. 0.318Em
b. 0.418Em
c. 0.518Em
d. 0.618Em

34. Change in Zener voltage of 10V at 100o C if temperature co-efficient is 0.072%o C as
a. 0.54 V b. 0.74 V c. 0.64 V d. 0.14 V


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