#1
5th August 2014, 08:56 AM
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IES Electrical Engineering Exam Question Paper
Will you please provide the IES Electrical Engineering exam Question Paper ?
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#2
5th August 2014, 11:17 AM
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Re: IES Electrical Engineering Exam Question Paper
Here I am providing the list of few questions of IES Electrical Engineering exam Question Paper for your idea. (a) Explain clearly what is meant by each of the following: (i) Poles and zeros of a network function (ii) Frequency response of a network (iii) Z parameters of two port network (a) Explain the different types of Electron emission from metals. (b) Explain briefly ‘work & function’ and its measure. (c) A tungsten emitter operates at a temperature of 2400 °K. By how many volts must the voltage equivalent of the work function change to reduce the emission current density by 15%? A = 60.2 amp em–2°K–2 b = 11605 f(where f is the work function). (a) Explain the basis on which solid materials are classified as Conductors, Insulators and Semiconductors. Bring out the difference between these types of materials with reference to energy band diagrams. (b) A silicon material is uniformly doped with phosphorus atoms at a concentration of 2 x 1019/m3. At temperature of interest the mobilities of holes and electrons are p = 0.05 m2/volt-sec v = 0.12 m2/volt-sec If n1 = 1.5 x 1016/m3 find the electron and bole concentrations and the electrical conductivity. For more questions , here is the attachment |
#3
9th December 2014, 03:36 PM
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IES Electrical Engineering Exam Question Paper
Will you please provide the sample Question Paper of IES Electrical Engineering exam ?
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#4
10th December 2014, 10:08 AM
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Re: IES Electrical Engineering Exam Question Paper
Here I am providing the information regarding the IES Electrical Engineering Exam Question Paper for your idea . Time Allowed: 2 hrs Maximum Marks :200 marks 1. *-c'==-\----@15 -2£2 ""919 c \Nvx- Z(S)""'"—> IFII g1!) 1F For the driving point impedance function,- 2 Z(s) = ail—+7515, the circuit realization is s +35+b shown above. The values of ‘a’ and ‘b’ respectively are ‘ (a) 4 and 5 _ (b) 2 and 5 (c) 2 and 1 (d) 2 and 3 2. Consider the following statements : The A to D converter used in a digital instrument could be 1. Successive approximation converter type. ‘ 2. Flash converter type. 3. Dual slope converter-type. The correct sequence in the increasing order of the conversion time taken by these types is (a) l, 2 and 3 (b) 2, 1 and 3 (c) l, 3 and 2 (d) 2, a and i Q-GUG-K-FFA 4. tzQAi For photoconductors with equal electron and hole mobilities and perfect ohmic contacts at the ends, an increase in intensity of optical illumination results in ' (a) a change in open circuit voltage (b)? a change in short circuit current (c) decrease in resistance (d) increase in resistance Consider the following statements in connection with two-position controller : 1. If the controller has a 4% neutral zone, ‘ its positive error band will be 2% and negative error band will be 8%. 2. The neutral zone is also known as dead band. 3. The‘controller action of a two-position controller is very similar to that of a pure on-off controller. 4. Air-conditioning system works essentially on a two-position control basis. ‘ Which of the above statements are correct ? (a) 1, 2 and 3 only (b) 2, 3 and 4 only (c) 2 and 4 only (d) 1, 2, 3 and 4 For the following driving point impedance functions, which of the following statements is true ? s+2‘ Z(s)= 1 52+35+5 s+2 Z(s)= 2 52+5 I 5+3 Z (s) = ——— 3 $2+2s+1 Z405) _ (s+2)(s+4) " (s+1)(s+3) (a) Z1 is not positive real (b) Z2 is positive real - (c) Z3 is positive real (d) Z4 is positive real 'Page 3 .6. A piezoelectric crystal has a thickness of 9. 2-5 mm and a 'voltage sensitivity of 0-05 Vin/N. The piezoelectric crystal is I subjected to an external _pressure_ of 1-6 x L06 N/m2, then the corresponding output voltage is - (a) 200 volts ‘ (b) .' 3-2 x 109 volts/m of thickness (c) 0-07 X 10-9 V/(mS/New) (d) 200 m volts. '7. 2(5) ' 0' ——> c— A reactance' network ‘in the Foster’s I form _ has poles at 0) = 0 (zero) and 0)o (infinity). The element in box-1 in the above network is 10. (a) a capacitor (h) an inductor (c) a parallel LC circuit ((1) a series LC circuit 8|. The measurement of Hall coefficient of -a semiconductor with one type of charge- carrier gives the information about (a) sign of charge carrier (b) density of charge carrier ‘ (c) - I both sign and density of charge carrier ((1) mass of the 'charge carrier Q-GUG-K-FFA "[ 3 — A ) Consider the following statements with reference to the phase plane : 1.7 They are general and applicable to a system of any order. 2. Steady state accuracy and existence of limit cycle can be predicted. 7 i 3. Amplitude and frequency of limit cycle if exists can be evaluated. 4. Can be applied to discontinuous time system. ‘ Which of the above statements are correct ? (a) 1,2, 3 and 4 I (b) ‘ 2 and 3 only (c) 3 and 4 only (d) 2, 3 and 4 only Consider the following units 'for the measurement of pressure directly : I 1. Rolta meter I 2. Bourdon tube 3. Planti meterl 4.. ‘ Varies J Of these, the pressure can be measured by (a) 1 and 2 only (b) 3 and 4 only (c) 2 only (d) 1, 2, 3 and 4Page 4 11. 1 14. ‘ 1c 'wv» . O 2 Z11(s)i~—> 2L gRz *— Z22(S) I ll: *0 2! For the circuit shown above, the natural frequencies at port 2 are given by s + 2 =‘ 0 and s + 5 = 0, without knowing which refers to open-circuit and which to short-circuit. Then the impedances Z11 and Z22 are given respectively by s + 5 s + 2 (a) K ,' 1 s + 2 K2 5 + 5 s + 2 s + 5 (b) K , 1 s + 5 K2 5 + 2 s s + 2 c K — ( l 1 s + 5 K2 5 + 5 15. s + 2 - s + 2 d K , ( ) 1 s f 5 K2 s + 5 12. If reflection coefficient for voltage beIO-G, the ' voltage standing wave ratio (VSWR) is (a). 0-66 (b) -4 (c) 1-5 (d) 2 13. Consider the following statements : Piezoelectric materials serve as 1. 'A source of ultrasonic waves. 2. When electric field is applied, the mechanical dimensions of the substances are not at all altered. 3. Converts electrical energy to mechanical and vice versa. 4. Converts thermal energy to electrical energy. . ' Which of the above statements is/are correct '? (a) 1 only (b) 2 and 3 only (c) 1 and only, (d) - 1, 2, 3 and 4 Q-GUG-K-FFA l 4 - A l A two-port network is defined by the relation; I1: 5Vl + 3V2 I2 = 2V1 — 7V2 The value of Z12 is (a) 3 (b) - —3 3 _ (C) H (d) 3 Consider the following statements : 1. The main shortcomings of diaphragms are that they are prone to shock vibrations. 2. Diaphragms have the advantages of high accuracy and good dynamic response. 3. Selection of material for diaphragms mainly depends upon temperature range and chemical nature of fluid coming in contact with diaphragm during pressure measurement. I Which of correct ? the above statements ‘ is/are (a) 1, 2 and 3 (b) 2 and 3 only (e) 1 only (all 1 and 2 onlyPage 5 16. The Z-transform of X(K) is given by 18. Consider the following statements : Z _ E1‘_.B_T)Z_1 Piezoelectric materials ‘ x( ) _ (I _ Z-1)(1 __e-TZ-1) 1.. . Crystal can be shown as electrical equivalent circuit similar to an inductor The initial value Km) is and a capacitor (Tank circuit). 2. Quartz, Rochelle salt, tourmaline. a) zero ' ( Used in voltage stabilizers.- (b) 1 - 4. This exhibits the reverse effect of electrostriction. (c) 2 Which of the above statements are correct ? (d) 3 I - (a) 1,2 and 4 only I -(b) 1 and 2 onlyr (c) 2 and 4 only 1 '(d) 1,2,3and4 17- L, ‘25 Q . e W 0 + + _ . 19. A balanced RYE-sequence, Y-connected (Star 7V1 1009; 211 - V2 connected) source with VRN = 100 volts‘is connected to a A-connected (Delta connected) _ _ balanced load of (8 + j6) ohms per phase. 0 '0 Then the phase current and line current values respectively, are The Y-parameters of the network shown above are (a) 10 A; 30 A (b) 10J§ A; 30 A —0'04 004 (a) |: 1 (c) 10 A; 10 A _-0-04 0-03 (d) 1.0J5A; 10J§A (b) 004 _0'04 20. A resistance strain gage with gage factor A ,_O-04 —003 (Sr) of 2 is bonded to a steel member, which is subjected to a strain of 1 X 10—6. The - _ original resistance value of this strain gage F 0-04 —O-03 is 120 Q. The change in resistance due to (c) . _. . - __0_04 0.03 the applied strain 15 (a) 60 Q _ (b) 240 >< 10-6 n _ —0-04 0-03 (d) 1 -(c) 2400 x _ 0-04 0-037 (d) 60 x 10* o Q-GUG-K-FFA I j 5 - A A two-port network is described 'by the 21. following equations : - V1: 5011 +2012 V2 = 3011} 1012 Then, which one of the following is not correct ? ‘ (a) Z12 = 20 ' ' (b) Y12 = 0-2 I (c) ‘ h12 = 2b (a) A = 25 ‘ 22. Match List I with last Il and select the correct answer using the code given below the lists : List I List I] A. Hall effect- 1. Varistor B._ Light energy . 2. Photodiodes C. Electric field 3. Measuring low magnetic field D. Applied voltage 4. Liquid crystal , display Code : A B C D (a) 1 2 4 3 (b) 3 2 4 1 P (c) \ 1 4 ' 2 3 ‘ (d) 3 4 2 ' 1 23. The system matrix of a continuous time system is given by A = [ O3 15]. Then the characteristic equation is H .(a) sz+5s+3l=0 (b) $2-ss-5=0 (c) s2+35+5=0 ,(d) 52+s+2=0 For the question paper , here is the attachment |
#5
23rd March 2015, 11:15 AM
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Re: IES Electrical Engineering Exam Question Paper
I want to get IES Electrical Engineering Exam Question Paper for doing preparation of this exam so will you please provide me that ?
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#6
23rd March 2015, 11:31 AM
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Re: IES Electrical Engineering Exam Question Paper
As you want to get IES Electrical Engineering Exam Question Paper for doing preparation of this exam so here I am giving you same: Questions will come from following topics: Paper I 1. EM Theory Electric and magnetic fields. Gauss’s Law and Amperes Law. Fields in dielectrics, conductors and magnetic materials. Maxwell’s equations. Time varying fields. Plane-Wave propagating in dielectric and conducting media. Transmission lines. 2. ELECTRICAL MATERIALS Band Theory, Conductors, Semi-conductors and Insulators. Super-conductivity. Insulators for electrical and electronic applications. Magnetic materials. Ferro and ferri magnetism. Ceramics, Properties and applications. Hall effect and its applications. Special semi conductors. 3. ELECTRICAL CIRCUITS Circuits elements. Kirchoff’s Laws. Mesh and nodal analysis. Network Theorems and applications. Natural response and forced response. Transient response and steady state response for arbitrary inputs. Properties of networks in terms of poles and zeros. Transfer function. Resonant circuits. Threephase circuits. Two-port networks. Elements of two-element network synthesis. 4. MEASUREMENTS AND INSTRUMENTATION Units and Standards. Error analysis, measurement of current, Voltage, power, Power-factor and energy. Indicating instruments. Measurement of resistance, inductance, Capacitance and frequency. Bridge measurements. Electronic measuring instruments. Digital Voltmeter and frequency counter. Transducers and their applications to the measurement of non-electrical quantities like temperature, pressure, flow-rate displacement, acceleration, noise level etc. Data acquisition systems. A/D and D/A converters. 5. CONTROL SYSTEMS Mathematical modeling of physical systems. Block diagrams and signal flow graphs and their reduction. Time domain and frequency domain analysis of linear dynamical system. Errors for different type of inputs and stability criteria for feedback systems. Stability analysis using Routh-Hurwitz array, Nyquist plot and Bode plot. Root locus and Nicols chart and the estimation of gain and phase margin. Basic concepts of compensator design. State variable matrix and its use in system modelling and design. Sampled data system and performance of such a system with the samples in the error channel. Stability of Sampled data system. Elements of non-linear control analysis. Control system components, electromechanical, hydraulic, pneumatic components. Paper II 1. ELECTRCIAL MACHINES AND POWER TRANSFORMERS Magnetic Circuits - Analysis and Design of Power transformers. Construction and testing. Equivalent circuits. Losses and efficiency. Regulation. Auto-transformer, 3-phase transformer. Parallel operation. Basic concepts in rotating machines. EMF, torque, Basic machine types. Construction and operation, leakage losses and efficiency. B.C. Machines. Construction, Excitation methods. Circuit models. Armature reaction and commutation. Characteristics and performance analysis. Generators and motors. Starting and speed control. Testing, Losses and efficiency. Synchronous Machines. Construction. Circuit model. Operating characteristics and performance analysis. Synchronous reactance. Efficiency. Voltage regulation. Salient-pole machine, Parallel operation. Hunting. Short circuit transients. Induction Machines. Construction. Principle of operation. Rotating fields. Characteristics and performance analysis. Determination of circuit model. Circle diagram. Starting and speed control. Fractional KW motors. Single-phase synchronous and induction motors. 2. POWER SYSTEMS Types of Power Stations, Hydro, Thermal and Nuclear Stations. Pumped storage plants. Economics and operating factors. Power transmission lines. Modeling and performance characteristics. Voltage control. Load flow studies. Optimal power system operation. Load frequency control. Symmetrical short circuit analysis. ZBus formulation. Symmetrical Components. Per Unit representation. Fault analysis. Transient and steady-state stability of power systems. Equal area criterion. Power system Transients. Power system Protection Circuit breakers. Relays. HVDC transmission. 3. ANALOG AND DIGITAL ELECTRONICS AND CIRCUITS Semiconductor device physics, PN junctions and transistors, circuit models and parameters, FET, Zener, tunnel, Schottky, photo diodes and their applications, rectifier circuits, voltage regulators and multipliers, switching behavior of diodes and transistors. Small signal amplifiers, biasing circuits, frequency response and improvement, multistage amplifiers and feed-back amplifiers, D.C. amplifiers, Oscillators. Large signal amplifiers, coupling methods, push pull amplifiers, operational amplifiers, wave shaping circuits. Multivibrators and flip-flops and their applications. Digital logic gate families, universal gates-combination circuits for arithmetic and logic operational, sequential logic circuits. Counters, registers, RAM and ROMs. 4. MICROPROCESSORS Microprocessor architecture-Instruction set and simple assembly language programming. Interfacing for memory and I/O. Applications of Micro-processors in power system. 5. COMMUNICATION SYSTEMS Types of modulation; AM, FM and PM. Demodulators. Noise and bandwidth considerations. Digital communication systems. Pulse code modulation and demodulation. Elements of sound and vision broadcasting. Carrier communication. Frequency division and time division multiplexing, Telemetry system in power engineering. 6. POWER ELECTRONICS Power Semiconductor devices. Thyristor. Power transistor, GTOs and MOSFETS. Characteristics and operation. AC to DC Converters; 1-phase and 3-phase DC to DC Converters; AC regulators. Thyristor controlled reactors; switched capacitor networks. Inverters; single-phase and 3-phase. Pulse width modulation. Sinusoidal modulation with uniform sampling. Switched mode power supplies. Here is the attachment of IES Electrical Engineering Exam Question Paper: IES Electrical Engineering Exam Question Paper |
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