How to become ISRO scientist?

I want to become scientist in Indian Space Research Organisation and for that I want to get the details of how to become ISRO scientist so can you provide me that?

[Arun Vats]

As you want to get the details of how to become ISRO scientist so here it is for you:

I want to tell you that you will have to give the entrance exam of ISRO Scientist which is conducted every year

Here for your reference I am giving you the details of that exam:

Well to become a scientist in ISRO, you should join Engineering in any of the below field

Electronics engineering
Mechanical engineering
Computer science engineering

ISRO conduct an exam yearly to recruit scientist/engineers

Eligibility for scientist/engineers Post
Candidate should not be above 35 years.
Candidate should also have completed BE/B.Tech or equivalent in the specialization applying for, with first class distinction and minimum aggregate percentage of 65 per cent.
Those candidates appearing for B.E/B Tech final examinations may apply provisionally.

Selection
Final selection for the Scientist/Engineer posts will be made on the basis of a written test and interview.

Candidates will be short listed for the written test on the basis of their academic merits and bio data and candidates successfully clearing the written test will be called for interview.

Here for your reference I am giving you the last year question papers of entrance exam of ISRO Scientist:

1. How many NAND gates required to implement AB+CD+EF
ANS. 4

2. Transparent latch is seen in which type of flip flop
ANS. D flip-flop.

3. Odd parity generator uses which logic?
1. Digital 2.Analog 3. Sequential 4.none

4. One question based on Ripple counter.

5. Which diagram corresponds to D-flip-flop?

6. Which type of ADC is fastest?
ANS-flash/Parallel

7. Which one of the following is fastest read/writable memory?
1. PROM 2. EEPROM 3. Flash 4.none

8. In array programming which one is used
1. SISD 2. PISD 3. MISD 4. None

9. DSP uses the computer architecture derived from- 4 options. I don?t remember.

10. Solve ?(t2?(t-2)dt ?

11. they given the Bargraph and asked to find the voltage from it?

12.find laplace transform of e-2t?
ANS- 1/s+2.

13. Which one of the following is correct-4 options i dont remember?

14. Given VSWR=2 find reflection coefficient?
ANS-1/3

15.There are 2 seats to fill in a office a wife and husband came for the interview. For overall competition the probability of a wife to get selected is 1/7. The probability of husband to be selected is 1/5. Then find the probability of either wife/husband to get selected?

16.given matrix 4 -3 -3
1 0 1
-5 -5 x find x?

17. Find the differential equation of y=Ae3x+Be2x ?

18. one problem based on determination of resistance and one on inverting and non inverting Amplifier.

19. two Questions based on capacitor and one question based on inductance?

20. The Unit step signal is given to inductance what is the output?

21. what is the difference b/w switch and HUB?
1. switch avoids flooding
2. HUB stops broadcasting.

22. one question related to Energy signal and time signal (Depending on ampitude and Phase)?

23.a question related to switch to find resistance if switch is closed?

24.Aquestion based on SI and GE?

25.one question based on Enhancement MOSFET?

26. problem to find Iceo?

27.what is the advantage of using 4 diodes in Bridge rectifier compared to full wave rectifier?

28. Question related to PIV of bridge rectifier compared to Full wave rectifier?

29.Which one of the following has high I/p impedance
1. CC 2. CB 3. CE 4. None

30. one question based on FET And JFET?

31. where does operating point located in B type power amplifier?

32. which type of power amplifier is used in satellite communication

1.Amplitron 2. Klystron 3. Magnetron 4. TWT

33. de-emphasis is used to
1. Attenuate low signals.
2. Attenuate High signals.
3.Attenuate middle signals.
4. none.

34. Envelope detector is an …..? Ans- Asynchronous detector.

35.which one of the following produce modulated signal as i/p signal?
1. FM 2. PM 3. AM 4. None

36. they asked to find the gain? Given o/p power and i/p power.-4 options

37. Asked a question from EMfield on HEBD something.. i dont rem…?

38. find the modulous of 1+cosA+isinA?

Q. Power diode is generally made from
a) Silicon
b) Germanium
c) Both
d) None of these

Q. When the both junction of NPN diode is reverse biased, then the diode is in which mode
a) Active
b) Cutoff
c) Saturation
d) inverted

Q. Which transistor mode gives the inverted output
a) Common Emitter
b) Common Base
c) Common Collector
d) None of these

Q. Which coupling gives the higher gain in case of amplifier
a) Capacitor coupling
b) Impedance coupling
c) Transformercoupling

Q. Which distortion is least objectionable in audio amplification
a) Phase
b) Frequency
c) Harmonic
d) Intermediation

Q. A narrow band amplifier has a band pass nearly…………of central frequency
a) 33.3%
b) 10%
c) 50%

Q. Phase shift oscillator consists
a) RL
b) RC
c) RLC

Q. Multivibrater Produces
a) Sine wave
b) Square wave
c) Smooth wave
d) sawtooth

Q. Convert the 101101 Binary number into octal no
a) 65
b) 55
c) 51
d) 45

Ans: 55

Q. 10 in BCD
a) 10100
b) 1100
c) 010111
d) None of these

Ans: None of these

Q. Which PNP device has a terminal for synchronizing purpose
a) SCS
b) Triac
c) Diac
d) SUS

Q. Addition of indium in semiconductor crystal makes
a) PNP
b) NPN

Q. Free electron exists in which band
a) 1
b) 2
c) 3
d) Conduction band

Q. Ripple factor of half wave rectifier
a) 1.21
b) 0.48
c) 0.5

Q. Transistor that can be used in enhancement mode
a) NPN
b) UJT
c) JFET
d) MOSFET

Q. Following contributes to harmonic distortion in Amplifier
a) +Ve feedback
b) –Ve feedback
c) Defective active device

Q. High cutoff frequency
a) CB
b) CC
c) CE

Q. Which is used as data selector?
a) Encoder
b) Decoder
c) modulator
d) Demodulator

Q. Read write capable memory
a) RAM
b) ROM
c) Both
d) None of these

Q.the radix or base of hexadecimal number system is ———–
a) 8
b) 16
c) 5
d) none of these

Ans: 16

Q.the no of 1’s in the binary representation of the expression 162*9+162*7+16*5+3 are
a) 10
b) 23
c) 6
d) 4

Q. the no of latches in F/F are ——-
a) 1
b) 2
c) 3
d) 4

Q.how many flip-flops are required to construct Mod -12 counter
a) 5
b) 4
c) 12
d) none

Ans: 4

Q. which logic gate has the output is compliment of its input ———-
a) OR
b) AND
c) NOT
d) X-OR

Ans: NOT

Q.no.of 2-input multiplexers needed to construct a 210 input multiplexer…….
a) 12
b) 31
c) 20
d) 16

Q.By adding inverters to the inputs and output of a AND gate we can obtain ……………
a) OR
b) AND
c) NOT
d) X-OR

Ans: X-OR

Q.how many NAND gates are needed to realize OR gate ————–
a) 1
b) 2
c) 3
d) 4

Ans: 3

Q.which is the first integrated logic family —————
a) RTL
b) DTL
c) TTL
d) none of these

Q. Which logic gate has output high if and only if all inputs are low ———?
a) NOR
b) NAND
c) X-NOR
d) AND

Ans: NAND

Q.According to Boolean algebra 1+A+B+C =
a) A
b) A+B+C
c) 1
d) none of these

Ans: 1

Q. If a=0x6db7 and b=0x2ae9 then what is the value of a”b————–
a) binary number for 1001.1101?
b) decimal number for 19?
c) excess-3 code for 29?

Q.what is the value of A’+1 ?
a) A
b) A’
c) 1
d) none of these

Ans: 1

Q.2 in 4 bit number one bit indicates sign of the number then the locations are from
a) -8 to 8
b) -7 to 7
c) -16 to 16
d) None

Q.Avalanche photo diode is used when compared to PIN diode bcz
a)larger band width
b)high sensitivity
C)——-
d)——–

Q.some non zero DC voltage is to RC low pass circuit then the DC voltage in the output contains
a) Same as in input
b) Higher than input
c) Zero
d) Slightly increases

Q.if the output of the gate is always high then the gates applied to this logic are 0,0
a) NAND and EX-NOR
b) NAND and NOR
c) AND and X-NOR
d) OR and XOR

Ans:a

Q.Thermal Run away is not possible in FET bcz the flow of
a)minority careers
b)Transconductance
c)_____
d)none

Ans : minority careers

Q.which of the following is/are true about 1′s and 2′s compements:
i)In 1′s complement form. 0 has two representations
ii)in 1′s complement, the magnitude of lowest number is equal to the magnitude of highest number
iii)In 2′s complement, 0 has two representations

a) i only
b) i and ii
c) iii only
d) all of these

Q.In the hybrid parameter model of a transistor reverse transfer voltage ratio and forward transfer current ratio are respectively given by:
a) h11 and h21
b) h12 and h11
c) h21 and h11
d) None of these

Q.The largest negative no can be represented with 8 bits in 2′s compliment representation?
a)-256
b)-255
c)-127
d)-128

Ans: -128

Q. How many NAND gates required to implement AB+CD+EF
a) 1
b) 2
c) 3
d) 4

Ans: 4

Q. Transparent latch is seen in which type of flip flop
a) SR FF
b) D FF
c) JK FF
d) D FF

Ans: D FF

Q. Odd parity generator uses which logic?
a) Digital
b) Analog
c) Sequential
d) none

Q. Which type of ADC is fastest?
a) SARC
b) Counter type
c) Intigrated type
d) Flash

ANS: Flash/Parallel

Q. Which one of the following is fastest read/writable memory?
a) PROM
b) EEPROM
c) Flash
d) none

Ans: Flash

8. In array programming which one is used
a) SISD
b) PISD
c) MISD
d) None

Q.Which one of the following has high I/p impedance
a) CC
b) CB
c) CE
d) None

Q. The maximum time allowed time for each flip flop for a mod 10 synchronous counter if each flip flop delay is 25ns.
a) 25 ns
b) 50 ns
c) 100 ns
d) none

Q. The resolution for a DAC is given by 0.4% then no. of bits of DAC is
a) 8- bits
b) 16- bits
c) 32- bits
d) none

Ans: 8- bits

41) The chip capacity is 256 bits, then the no.of chips required to build 1024 B memory Is
a) 32
b) 16
c) 15
d) 4

Q. Which of the following are correct?
1)A flip-flop is used to store 1-bit of information
2)Race around condition occurs in JK flip flop when both the inputs are 1
3)Master slave flip flop is used to store 2 bits of information
4)A transparent latch consists of a D- flip flop

a) 1,2,3
b) 1,3,4
c) 1,2,4
d) 2,3,4

Ans: 1,2,4

Q. output resistance of ideal OP AMP is
a) 0
b) 1
c) infinite
d) very high

ANS: 0

Q. CMRR of an OP AMP is given as 80db and Ad is 20000.Value of Acm will be
a) 4
b) 8
c) 2
d) 1

Ans: 2

Q.Si,Ge lie in ……..block of periodic table
a) III
b) V
c) IV A
d) IV B

Ans: IV A

Q.to obtain 10 mV resolution on 5 V range how many bit DAC is to be used
a) 4
b) 8
c) 16
d) 32

Q.% resolution of a 10 bit ADC
a) 1.588%
b) 0.392%
c) 0.0978%
d) 0.0244%

Ans: 0.0978%

Q.Efficiency of half wave rectifier
a) 45%
b) 50%
c) 86%
d) 100%

Contact Details:
Indian Space Research Organisation
ISRO Road,
Amarjyothi Layout,
Raj Mahal Vilas,
2nd Stage, Sanjay Nagar,
Bangalore,
Karnataka 560094 ‎
080 2341 5275 ‎
India

Map Location:
[MAP]https://www.google.co.in/maps?q=Indian+Space+Research+Organisation&hl=en&ll =13.036324,77.571459&spn=0.005278,0.006523&sll=28. 539437,77.163508&sspn=0.076155,0.10437&hq=Indian+S pace+Research+Organisation&radius=15000&t=m&z=17&i wloc=A[/MAP]

I have completed my B. Tech in Electronics now I want to apply for ISRO scientist post so for that will you please provide me information about it ?

[Pathak]

As you want ton apply for ISRO scientist post after completing B. Tech in Electronics so here I am giving you information about that:

Eligibility:

Nationality:
Candidate must be an Indian Citizen.

Age Limit:
Minimum age is 21 years.
Maximum age is 35 years.

Qualification:
Candidate must have completed their B.E/ B. Tech with at least 65% from recognized Universities.

Relaxation Age:
OBC +3 years
SC/ST +5 years

Syllabus:
(1) Physical Electronics, Electron Devices and ICs:

Electrons and holes in semi-conductors, Carner Statistics, Mechanism of current flow in a semi-conductor, Hall effect; Junction theory; Different types of diodes and their characteristics; Bipolar Junction transistor; Field effect transistors; Power switching devices like SCRs, GTOs, power MOSFETs; Basics of ICs-bipolar, MOS and CMOS types; basic and Opto Electronics.

(2) Signals and Systems:

Classification of signals and systems; System modeling in terms of differential and difference equations; State variable representation; Fourier series; Fourier transforms and their application to system analysis; Laplace transforms and their application to system analysis; Convolution and superposition integrals and their applications; Z-transforms and their applications to the analysis and characterization of discrete time systems; Random signals and probability; Correlation functions; Spectral density; Response of linear system to random inputs.

(3) Network Theory:

Network analysis techniques; Network theorems, transient response, steady state sinusoidal response; Network graphs and their applications in network analysis; Tellegen's theorem. Two port networks; Z, Y, h and transmission parameters. Combination of two ports, analysis of common two ports. Network functions: parts of network functions, obtaining a network function from a given part. Transmission criteria: delay and rise time, Elmore's and other definitions effect of cascading. Elements of network synthesis.

(4) Electromagnetic Theory:

Analysis of electrostatic and magneto-static fields; Laplace's and Poisson's equations; Boundary value problems and their solutions; Maxwell's equations; application to wave propagation in bounded and unbounded media; Transmission lines: basic theory, standing waves, matching applications, microstrip lines; Basics of wave guides and resonators; Elements of antenna theory.

(5) Analog Electronic Circuits:

Transistor biasing and stabilization. Small signal analysis. Power amplifiers. Frequency. response. Wide banding techniques. Feedback amplifiers. Tuned amplifiers. Oscillators, Rectifiers and power supplies. Op Amp, PLL, other linear integrated circuits and applications. Pulse shaping circuits and waveform generators.

(6) Digital Electronic Circuits:

Transistor as a switching element; Boolean algebra, simplification of Boolean function Karnaugh map and applications; IC Logic gates and their characteristics; IC logic families: DTL, TTL, ECL, NMOS, PMOS and CMOS gates and their comparison; Combinational logic circuits; Half adder, Full adder; Digital comparator; Multiplexer De-multiplexer; ROM and their applications. Flip-flops. R-S, J-K, D and T flip-tops; Different types of counters and registers. Waveform generators. A/D and D/A converters. Semi-conductor memories.

(7) Control Systems:

Transient and steady state response of control systems; Effect of feedback on stability and sensitivity; Root locus techniques; Frequency response analysis. Concepts of gain and phase margins; Constant-M and Constant-N Nichol's Chart; Approximation of transient response from Constant-N Nichol's Chart; Approximation of transient response from closed loop frequency response; Design of Control Systems; Compensators; Industrial controllers.

(8) Communication Systems:

Basic information theory; Modulation and detection in analogue and digital systems; Sampling and data reconstructions; Quantization and coding; Time division and frequency division multiplexing; Equalization; Optical Communication: in free space and fiber optic; Propagation of signals at HF, VHF, UHF and microwave frequency; Satellite Communication.

(9) Microwave Engineering:

Microwave Tubes and solid state devices, Microwave generation and amplifiers, Wave guides and other Microwave Components and Circuits, Microstrip circuits, Microwave Antennas, Microwave Measurements, Masers, Lasers; Micro-wave propagation. Microwave Communication Systems-terrestrial and satellite based.

(10) Computer Engineering:

Number Systems. Data representation; Programming; Elements of a high level programming language PASCAL/C; Use of basic data structures; Fundamentals of computer architecture; Processor design; Control unit design; Memory organization, I/o System Organization. Microprocessors: Architecture and instruction set of Microprocessor's 8085 and 8086, Assembly language Programming. Microprocessor Based system design: typical examples. Personal computers and their typical uses.