GATE Electronics and Communication Paper with Answers

Provide me question paper for electronics and communication engineering paper of graduate aptitude test in engineering examination ?

[Arun Vats]

Here I am giving you question paper for electronics and communication engineering paper of graduate aptitude test in engineering examination in PDF file attached with it so you can get it easily.

1. A bulb in a staircase has two switches, one switch being at the ground floor
and the other one at the first floor. The bulb can be turned ON and also can
be turned OFF by any one of the switches irrespective of the state of the
other switch. The logic of switching of the bulb resembles
(A) an AND gate (B) an OR gate (C) an XOR gate (D) a NAND gate
Answer: (C)

4. In a forward biased pn junction diode, the sequence of events that best describes
the mechanism of current flow is
(A) injection, and subsequent diffusion and recombination of minority carriers
(B) injection, and subsequent drift and generation of minority carriers
(C) extraction, and subsequent diffusion and generation of minority carriers
(D) extraction, and subsequent drift and recombination of minority carriers
Answer: (A)

5. In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation
(using steam or water vapor) produces
(A) superior quality oxide with a higher growth rate
(B) inferior quality oxide with a higher growth rate
(C) inferior quality oxide with a lower growth rate
(D) superior quality oxide with a lower growth rate
Answer: (D)

13. The bit rate of a digital communication system is R kbits/s. The modulation used is
32-QAM. The minimum bandwidth required for ISI free transmission is
(A) R/10 Hz (B) R/10 kHz (C) R/5 Hz (D) R/5 kHz
Answer: (B)

16. A band-limited signal with a maximum frequency of 5 kHz is to be sampled.
According to the sampling theorem, the sampling frequency which is not valid is
(A) 5 kHz (B) 12 kHz (C) 15 kHz (D) 20 kHz
Answer: (A)

17. In a MOSFET operating in the saturation region, the channel length modulation
effect causes
(A) an increase in the gate-source capacitance
(B) a decrease in the Transconductance
(C) a decrease in the unity-gain cutoff frequency
(D) a decrease in the output resistance
Answer: (D)