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  #1  
27th August 2015, 09:42 AM
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Electronics and Communication Engineering Syllabus RTU

Hello sir I am looking for the Electronics and Communication Engineering Syllabus of Rajasthan Technical University so would you please provide me ECE Syllabus of RTU???
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  #2  
27th August 2015, 09:45 AM
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Join Date: May 2012
Re: Electronics and Communication Engineering Syllabus RTU

As you are looking for the Electronics and Communication Engineering Syllabus of Rajasthan Technical University so here I am providing you the same………

ELECTRONIC DEVICES & CIRCUITS
UNIT I
SEMICONDUCTOR PHYSICS - Mobility and conductivity, Charge

densities in a semiconductor, Fermi Dirac distribution, Fermi-Dirac statistics
and Boltzmann approximation to the Fermi-Dirac statistics, Carrier
concentrations and Fermi levels in semiconductor, Generation and
recombination of charges, Diffusion and continuity equation, Transport
equations, Mass action Law, Hall effect.

UNIT II

JUNCTION DIODES - Formation of homogenous and hetrojuntion
diodes and their energy band diagrams, Calculation of contact potential and
depletion width, V-I characteristics, Small signal models of diode, Diode as a
circuit element, Diode parameters and load line concept, C-V
characteristics and dopant profile.
Applications of diodes in rectifier, Clipping, Clamping circuits and voltage
multipliers, Transient behavior of PN diode, Breakdown diodes, Schottky
diodes, and Zener diode as voltage regulator, Construction, Characteristics and
operating principle of UJT.

UNIT III

TRANSISTORS - Characteristics, Current components, Current gains: alpha
and beta. Variation of transistor parameter with temperature and current level,
Operating point, Hybrid model, DC model of transistor, h-parameter equivalent
circuits. CE, CB and CC configuration. DC and AC analysis of single stage CE,
CC (Emitter follower) and CB amplifiers AC & DC load line, Ebers-Moll
model. Biasing & stabilization techniques. Thermal runaway, Thermal stability.

UNIT IV

JFET & MOSFET - Construction and operation, Noise performances of
FET, Parasitic of MOSFET, Small signal models of JFET & MOSFET, Biasing
of JFET's & MOSFET’s, Low frequency single stage CS and CD (source
follower) JFET amplifiers, FET as voltage variable resistor and FET as active
load.

UNIT V

SMALL SIGNAL AMPLIFIERS AT LOW FREQUENCY - Analysis of
BJT and FET multistage amplifier, DC and RC coupled amplifiers. Frequency response of single and multistage amplifier, mid-band gain, gains at low and
high frequency. Analysis of DC and differential amplifiers, Miller's Theorem, use of Miller and
bootstrap configuration. Cascade and cascode configuration of multistage
amplifiers (CE-CE, CE-CB, CS-CS and CS-CD), Darlington pair.

REFERENCE BOOKs:

Electronic devices & circuits theory, R.L. Boylestad, Louis Nashelsky , Pearson education
Electronic devices & circuits, David Bell, Oxford Publications
M Rashid – Microelectronic circuits : Analysis & Design, Cengage learning
Millman, Electronics Devices and Circuits, TMH
Electronic Devices,7e, Floyd, Pearson
A.S. Sedra and K.C. Smith, Microelectronic Circuits, Saunder's College Publishing





Rest of the syllabus here I am attaching pdf file which is free for download….
Attached Files
File Type: pdf Electronics and Communication Engineering Syllabus RTU.pdf (709.7 KB, 169 views)


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