Delhi Development Authority Jr Engineer Exam Paper

Please provide the syllabus for the Delhi Development Authority Jr Engineer recruitment Exam Paper ?

[Quick Sam]

As you ant I am here providing you the syllabus for the Delhi Development Authority Jr Engineer recruitment Exam Paper.

Delhi Development Authority Jr Engineer recruitment Exam Paper Consists questions on the basis of the syllabus as :

Syllabus for Junior Engineer (Civil)
Questions: 120 Questions
Civil Engineering: 80 Questions

General Knowledge,
General Awareness,
Logical reasoning,
Numerical Ability: 40 Questions

Syllabus for Junior Engineer (Electrical/Mechanical)
Questions: 120 Questions
Electrical Engineering: 40 Questions
Mechanical Engineering: 40 Questions
General Knowledge,
General Awareness,
Logical reasoning,
Numerical Ability: 40 Questions

Syllabus for Sectional Officer (Horticulture)
Questions: 120 Questions
Agriculture: 80 Questions (B. Sc. Agri Level)
Mechanical Engineering: 40 Questions
General Knowledge,
General Awareness,
Logical reasoning,
Numerical Ability: 40 Questions

Syllabus for Lower Division Clerk-cum-Typist
General Knowledge,
General Awareness,
Logical Reasoning,
Clerical Aptitude,
General English,
General Hindi
Computer Skill: 100 Questions

Will you please provide the Delhi Development Authority Jr Engineer Electrical Engineering Exam question paper ?

[Quick Sam]

Here I am providing the list of few questions of Delhi Development Authority Jr Engineer Electrical Engineering Exam question paper which you are looking for .

Question1. Power factor of a linear circuit is defined as the:

Ratio of real power to reactive power
Ratio of real power to apparent power
Ratio of reactive power to apparent power
Ratio of resistance to inductance

Question2. Consider Insulated Gate Bipolar Transistor (IGBT) and Bipolar Junction Transistor (BJT). which of the following statement is correct:

Both IGBT and BJT are current-controlled devices
Both IGBT and BJT are voltage-controlled devices
IGBT is a current-controlled device and BJT is a voltage-controlled device
IGBT is a voltage-controlled device and BJT is a current-controlled device

Question3. An n-channel enhancement MOSFET with channel length L = 1 μm, channel width W = 8 μm and threshold voltage Vt = 0.8 V operates in the saturation region. The process trans conductance parameter is 200 μA/V2. The gate-to-source voltage for a drain current of 100 μA is:

15 V.
25 V.
35 V.
45 V.

Question4. The input and output impedances of a voltage follower based on an ideal operational amplifier are:

Infinite and zero, respectively.
Zero and Infinite, respectively.
Both infinite.
Both zero.

Question5. Photodiode is a:

Semiconductor PN junction diode and operates in reverse-bias region.
Semiconductor PN junction diode and operates in forward-bias region.
Metal to semiconductor junction diode and operates in reverse bias region.
Metal to semiconductor junction diode and operates in forward bias region.

Question6. A pure sine wave is:

A digital signal
Analog signal
Can be digital or analog signal
Neither digital nor analog signal

Question7. A typical microcomputer has 65,536 registers in its memory. It will be specified as :

65,536 Memory
65,536 K Memory
64 K Memory
8 K Memory

Question8. The electronic, magnetic and mechanical devices of a computer are known as:

CPU
Memory
Hardware
Radix

Question9. A gate in which all input must be low to get a high output is called:

An inverter
A NOR gate
An AND gate
A NAND gate

Question10. BCD numbers are obtained by:
Converting decimal number to binary
Converting decimal to octal number
Each decimal digit is represented by a four bit binary
Converting binary to decimal

Question11. The term VLSI generally refers to a digital IC having:

More than 1000 gates
More than 100 gates
More than 1000 but less than 9999 gates
More than 100 but less than 999 gates

Will you provide question paper of civil engineering 2014

Sir ,plz provide me last year question papers and model paper for sectional officer (Horticulture) .My id is vandanavarshney15@gmail.com